Flexible Electronics News

Japan’s Air Water to Develop GaN-on-SiC-on-Si with AIXTRON System

Company builds on large diameter silicon carbide (SiC) on silicon technology

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By: DAVID SAVASTANO

Editor, Ink World Magazine

AIXTRON SE announced that Air Water Inc. of Azumino/Japan is reporting the successful installation of a fully automated AIX G5 HT Planetary Reactor in a 8×6-inch configuration for the growth of GaN epitaxial layers. Air Water selected the AIXTRON MOCVD system based on its ability to deliver superior material uniformity, a key factor in demonstrating the advantage of Air Water substrates for GaN epitaxy. Following system installation, the company has announced the release of GaN-on-SiC o...

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